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| APT60GT60JRD 600V 90A E C Thunderbolt IGBTTM & FRED The Thunderbolt IGBTTM is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBTTM combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed. E G SO ISOTOP (R) 2 T- 27 "UL Recognized" * Low Forward Voltage Drop * Low Tail Current * Ultrafast Soft Recovery Antiparallel Diode MAXIMUM RATINGS (IGBT) Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter Collector-Emitter Voltage * High Freq. Switching to 150KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated C G E All Ratings: TC = 25C unless otherwise specified. APT60GF60JRD UNIT 600 RY A IN MIN Collector-Gate Voltage (RGE = 20K) Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation 1 1 600 20 90 60 180 120 375 -55 to 150 300 Watts C Amps Volts @ TC = 25C @ TC = 110C Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) TYP MAX UNIT PR EL IM 600 3 1.6 4 2.0 5 2.5 2.8 0.3 3.0 100 mA nA Volts Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) I CES I GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street APT Website - http://www.advancedpower.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 052-6260 Rev B DYNAMIC CHARACTERISTICS (IGBT) Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 APT60GT60JRD Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.8VCES Resistive Switching (25C) VGE = 15V I C = I C2 VCC = 0.8VCES RG = 5 I C = I C2 MIN TYP MAX UNIT 3200 400 180 280 120 20 14 55 200 140 25 75 300 95 1.9 2.4 4.3 mJ ns ns nC pF Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time IM EL 3 3 Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 5 TJ = +150C Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time PR IN A RY 6 MIN Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 5 25 75 260 90 3.8 mJ S ns Turn-off Delay Time Fall Time Total Switching Losses 3 TJ = +25C VCE = 20V, I C = I C2 Forward Transconductance THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Symbol RJC RJA WT Characteristic Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient TYP MAX UNIT 0.33 0.66 20 1.03 oz gm C/W Package Weight 29.2 13.6 lb*in N*m Torque 1 Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine) 1.5 052-6260 Rev B Repetitive Rating: Pulse width limited by maximum junction temperature. See MIL-STD-750 Method 3471 These switching losses are a combination of both the FRED and the IGBT. APT Reserves the right to change, without notice, the specifications and information contained herein. 2 3 APT60GT60JRD ULTRAFAST SOFT RECOVERY PARALLEL DIODE MAXIMUM RATINGS (FRED) Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 85C, Duty Cycle = 0.5) All Ratings: TC = 25C unless otherwise specified. APT60GT60JRD UNIT 600 Volts 60 100 600 Amps Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) STATIC ELECTRICAL CHARACTERISTICS (FRED) Symbol Characteristic / Test Conditions IN A RY MIN MIN TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C RMS Forward Current TYP MAX UNIT IM IF = 60A IF = 120A 1.8 1.75 1.5 Volts VF Maximum Forward Voltage EL DYNAMIC CHARACTERISTICS (FRED) Symbol trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 diM/dt IF = 60A, diF /dt = -480A/s, VR = 350V Characteristic IF = 60A, TJ = 150C PR TYP MAX UNIT Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/s, VR = 30V, TJ = 25C Reverse Recovery Time IF = 60A, diF /dt = -480A/s, VR = 350V Forward Recovery Time IF = 60A, diF /dt = 480A/s, VR = 350V Reverse Recovery Current IF = 60A, diF /dt = -480A/s, VR = 350V Recovery Charge IF = 60A, diF /dt = -480A/s, VR = 350V Forward Recovery Voltage IF = 60A, diF /dt = 480A/s, VR = 350V Rate of Fall of Recovery Current 55 70 90 160 160 10 20 350 70 ns 17 Amps 30 nC 900 6 Volts 6 A/s 052-6260 Rev B 800 500 APT60GT60JRD 200 Qrr, REVERSE RECOVERY CHARGE (nano-COULOMBS) 2500 TJ = 100C VR = 350V IF, FORWARD CURRENT (AMPERES) 160 TJ = 150C TJ = 100C 80 TJ = 25C TJ = -55C 40 2000 120A 1500 60A 120 1000 500 30A 0 0.5 1.0 1.5 2.0 2.5 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) Figure 1, Forward Voltage Drop vs Forward Current 50 IRRM, REVERSE RECOVERY CURRENT (AMPERES) TJ = 100C VR = 350V 0 0 10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 2, Reverse Recovery Charge vs Current Slew Rate 2.0 Kf, DYNAMIC PARAMETERS (NORMALIZED) 40 120A 1.6 RY trr IRRM Qrr -50 TJ = 100C VR = 350V IF = 60A 60A 30 30A 20 Qrr trr 1.2 10 IM 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 3, Reverse Recovery Current vs Current Slew Rate 200 TJ = 100C VR = 350V IN 0.4 0.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 4, Dynamic Parameters vs Junction Temperature 1200 15.0 Vfr, FORWARD RECOVERY VOLTAGE (VOLTS) EL tfr, FORWARD RECOVERY TIME (nano-SECONDS) A 0.8 trr, REVERSE RECOVERY TIME (nano-SECONDS) 160 120A 60A 30A 1000 800 600 400 200 12.5 10.0 7.5 5.0 2.5 120 80 40 PR Vfr Tfr 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 5, Reverse Recovery Time vs Current Slew Rate 0.7 0.5 ZJC, THERMAL IMPEDANCE (C/W) 0 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate D=0.5 0.2 0.1 0.05 0.1 0.05 0.02 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.01 0.005 0.01 SINGLE PULSE 052-6260 Rev B 10-3 10-2 10-1 VR, REVERSE VOLTAGE (VOLTS) RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 0.001 10-5 10-4 1.0 10 APT60GT60JRD Vr D.U.T. 30H trr/Qrr Waveform +15v diF /dt Adjust 0v -15v 1 2 3 4 IF - Forward Conduction Current PR EL IM IN A RY Figure 25, Diode Reverse Recovery Test Circuit and Waveforms PEARSON 411 CURRENT TRANSFORMER diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. IRRM - Peak Reverse Recovery Current. 1 4 6 Zero 5 trr - Reverse Recovery Time Measured from Point of IF 3 Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM. 0.5 IRRM 0.75 IRRM 2 5 6 Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr. Qrr = 1/2 (trr . IRRM) Figure 8, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) * Emitter Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. 052-6260 Rev B 38.0 (1.496) 38.2 (1.504) * Emitter Dimensions in Millimeters and (Inches) Gate |
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